2N6036
2N6039
COMPLEMENTARY SILICON
POWER DARLINGTON TRANSISTORS
s
2N6036 IS A SGS-THOMSON PREFERRED
SALESTYPE
s
COMPLEMENTARY PNP - NPN DEVICES
s
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
s
GENERAL PURPOSE SWITCHING
s
GENERAL PURPOSE AMPLIFIER
DESCRIPTION
The 2N6036 and 2N6039 are complementary
silicon power Darlington transistors mounted in
Jedec SOT-32 plastic package.
INTERNAL SCHEMATIC DIAGRAM
June 1997
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Val ue
Uni t
PNP
2N6036
NPN
2N6039
V
CBO
Collector-Base Voltage (I
E
= 0)
80
V
V
CEO
Collector-Emit ter Voltage (I
B
= 0)
80
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
5
V
I
C
Collector Current
4
A
I
CM
Collector Peak Current
8
A
I
B
Base Current
0.1
A
P
t ot
Tot al Dissipation at T
c
25
o
C
40
W
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. O perat ing Junction Temperature
150
o
C
For PNP types voltage and current values are negative.
3
2
1
SOT-32
R
1
Typ. = 7 K
R
2
Typ. = 230
1/6
THERMAL DATA
R
t hj-ca se
R
t hj- amb
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
3.12
83.3
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
I
CEX
Collect or Cut-off
Current (V
BE
= -1.5V)
V
CE
= rated V
CEO
V
CE
= rated V
CEO
T
c
= 125
o
C
0.1
0.5
mA
mA
I
CBO
Collect or Cut-off
Current (I
E
= 0)
V
CE
= rated V
CBO
0.1
mA
I
CEO
Collect or Cut-off
Current (I
B
= 0)
V
CE
= rated V
CEO
0.1
mA
I
EBO
Emitt er Cut-off Current
(I
C
= 0)
V
EB
= 5 V
2
mA
V
CEO(sus )
Collect or-Emitter
Sustaining Voltage
I
C
= 100 mA
80
V
V
CE(sat )
Collect or-Emitter
Saturat ion Voltage
I
C
= 2 A
I
B
= 8 mA
I
C
= 4 A
I
B
= 40 mA
2
3
V
V
V
BE(s at)
Base-Emitt er
Saturat ion Voltage
I
C
= 4 A
I
B
= 40 mA
4
V
V
BE
Base-Emitt er Voltage
I
C
= 2 A
V
CE
= 3 V
2.8
V
h
FE
DC Current G ain
I
C
= 0. 5 A
V
CE
= 3 V
I
C
= 2 A
V
CE
= 3 V
I
C
= 4 A
V
CE
= 3 V
500
750
100
15000
h
f e
Small Signal Current
Gain
I
C
= 0. 75 A
V
CE
= 10 V
f = 1KHz
25
C
CBO
Collect or Base
Capacitance
I
E
= 0
V
CB
= 10 V
f = 1MHz
for NPN typ es
for PNP types
100
200
pF
pF
Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
Safe Operating Area
Derating Curve
2N6036/2N6039
2/6
DC Current Gain (NPN type)
Collector Emitter Saturation Voltage (NPN type)
Base Emitter Saturation Voltage (NPN type)
DC Current Gain (PNP type)
Collector Emitter Saturation Voltage (PNP type)
Base Emitter Saturation Voltage (PNP type)
2N6036/2N6039
3/6
Base-Emitter On Voltage (NPN type)
Freewheel Diode Forward Voltage (NPN type)
Base-Emitter On Voltage (PNP type)
Freewheel Diode Forward Voltage (PNP type)
2N6036/2N6039
4/6
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
7.4
7.8
0.291
0.307
B
10.5
10.8
0.413
0.445
b
0.7
0.9
0.028
0.035
b1
0.49
0.75
0.019
0.030
C
2.4
2.7
0.040
0.106
c1
1.0
1.3
0.039
0.050
D
15.4
16.0
0.606
0.629
e
2.2
0.087
e3
4.15
4.65
0.163
0.183
F
3.8
0.150
G
3
3.2
0.118
0.126
H
2.54
0.100
H2
2.15
0.084
H2
0016114
SOT-32 (TO-126) MECHANICAL DATA
2N6036/2N6039
5/6
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